Ph.D., Electronics & Communication Engineering
Ongoing
IIT Bhubaneswar · Cryogenic TCAD of GAA Nanosheet FETs
Khushi Jain
PhD Research Scholar · Cryogenic TCAD
Dept. of Electronics & Communication Engineering, IIT Bhubaneswar
About
I study advanced semiconductor devices through physics-based TCAD simulation, focusing on Gate-All-Around (GAA) nanosheet FETs at 4.2 K, where classical device models break down and freeze-out, band-tail conduction, and trap-induced noise take over. Supervised by Dr. Navjeet Bagga.
Research
- Cryogenic device simulation — GAA nanosheet FETs to 4.2 K, freeze-out, incomplete ionization, SS saturation.
- Reliability & noise — RTN and NMP charge trapping with trap-location dependence in 3D.
- Radiation effects — SET/SEU in stacked nanosheets, including cryogenic soft errors.
- Compact modeling — cryo-aware BSIM-CMG/IMG capturing band tails and trap noise.
Skills
TCAD: GTS Framework, MINIMOS-NT, Sentaurus, Comphy
Circuits: Cadence Virtuoso, BSIM-CMG, ngspice / Xyce, Verilog
Analysis: Python, MATLAB, LaTeX, Origin
Education
B.Tech, Electrical Engineering
2020–2024
COEP College of Engineering Pune
Publications
Journal
IEEE TDMR · Selected
Alpha-particle-induced single-event transients and resistivity modulation in nanosheet FETs
Khushi Jain, Sandeep Kumar, Sunil Rathore, Shashank Banchhor, Navjeet Bagga
Conferences
IWPSD · Selected
Machine Learning–Augmented TCAD Analysis of Metal Grain Granularities in Nanosheet FET
Khushi Jain, A Sree Shiva Kumar, Deven H Patil, Riya Shaw, Sarbeswar Nayak, Bathula Satwik, Jyoti Patel, Navjeet Bagga
VDAT 2026 · Special Mention Award
Impact of Band-Edge State Occupation and Critical Temperature Effects on Subthreshold Swing Characteristics of Cryogenic FinFETs
Khushi Jain, Sandeep Kumar, Navjeet Bagga